SI4423DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Rise Time :

165ns

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Turn On Delay Time :

75 ns

Number of Pins :

8

Terminal Form :

Gull wing

Vgs (Max) :

±8V

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

-10A

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.0075Ohm

Length :

5mm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 14A, 4.5V

Number of Channels :

1

Height :

1.55mm

Vgs(th) (Max) @ Id :

900mV @ 600μA

Power Dissipation-Max :

1.5W Ta

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

1.5W

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

175nC @ 5V

ECCN Code :

EAR99

Element Configuration :

Single

Weight :

506.605978mg

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

460 ns

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

165 ns

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Width :

4mm

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE