SI4420DYTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

50A

Nominal Vgs :

1 V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Resistance :

9mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Rds On (Max) @ Id, Vgs :

9m Ω @ 12.5A, 10V

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Current Rating :

12.5A

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage - Rated DC :

30V

Number of Terminations :

8

Avalanche Energy Rating (Eas) :

400 mJ

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta

Width :

3.9878mm

Fall Time (Typ) :

47 ns

Threshold Voltage :

1V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

15 ns

Turn-Off Delay Time :

55 ns

Height :

1.4986mm

Length :

4.9784mm

Input Capacitance (Ciss) (Max) @ Vds :

2240pF @ 15V

Vgs (Max) :

±20V

FET Type :

N-Channel

Lead Free :

Contains Lead, Lead Free

Number of Pins :

8

Transistor Application :

SWITCHING

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Number of Elements :

1

Series :

HEXFET®

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

12.5A

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Rise Time :

10ns

Transistor Element Material :

SILICON

Terminal Position :

Dual