SI4420DYTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2240pF @ 15V

JEDEC-95 Code :

MS-012AA

Drain Current-Max (Abs) (ID) :

12.5A

Avalanche Energy Rating (Eas) :

400 mJ

Drain-source On Resistance-Max :

0.009Ohm

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Position :

Dual

Transistor Element Material :

SILICON

Number of Terminations :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

50A

Rds On (Max) @ Id, Vgs :

9m Ω @ 12.5A, 10V

JESD-30 Code :

R-PDSO-G8

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

RoHS Status :

Non-RoHS Compliant