SI4420DYPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain-source On Resistance-Max :

0.009Ohm

FET Type :

N-Channel

Published :

2004

Avalanche Energy Rating (Eas) :

400 mJ

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2240pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

12.5A

JEDEC-95 Code :

MS-012AA

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 12.5A, 10V

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

50A

JESD-30 Code :

R-PDSO-G8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Packaging :

Tube

Power Dissipation-Max :

2.5W Ta