SI4420DY
- Mfr.Part #
- SI4420DY
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12.5A 8SO
- Stock
- 3,850
- In Stock :
- 3,850
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 12.5A
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.5W Ta
- JESD-30 Code :
- R-PDSO-G8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.18pF @ 15V
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 12.5A, 10V
- Drain-source On Resistance-Max :
- 0.009Ohm
- DS Breakdown Voltage-Min :
- 30V
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 5V
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Ta
- Number of Terminations :
- 8
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 8
- Datasheets
- SI4420DY

N-Channel Tube 9m Ω @ 12.5A, 10V ±20V 2.18pF @ 15V 53nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
SI4420DY Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.18pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 12.5A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SI4420DY Features
a 30V drain to source voltage (Vdss)
SI4420DY Applications
There are a lot of Rochester Electronics, LLC
SI4420DY applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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