SI4420BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

9.5A

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

1.4W Ta

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Fall Time (Typ) :

11 ns

Mount :

Surface Mount

Turn On Delay Time :

15 ns

Turn-Off Delay Time :

40 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Power Dissipation :

1.4W

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Channels :

1

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

1.55mm

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Length :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 13.5A, 10V

Series :

TrenchFET®

Continuous Drain Current (ID) :

13.5A

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Published :

2009

Terminal Finish :

Matte Tin (Sn)

Rise Time :

11ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4mm

Number of Terminations :

8

Number of Elements :

1

Pin Count :

8

Weight :

186.993455mg

Vgs (Max) :

±20V