SI4420BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Threshold Voltage :

3V

Weight :

186.993455mg

Mount :

Surface Mount

FET Type :

N-Channel

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Forward Voltage :

750mV

Published :

2016

Pin Count :

8

Height :

1.55mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Number of Channels :

1

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

9.5A

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Turn-Off Delay Time :

40 ns

Width :

4mm

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 13.5A, 10V

Rise Time :

11ns

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.4W

Element Configuration :

Single

Number of Terminations :

8

ECCN Code :

EAR99

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

30V

Length :

5mm

Resistance :

8.5mOhm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

Power Dissipation-Max :

1.4W Ta

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Pins :

8

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V