SI4418DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Terminal Finish :

PURE MATTE TIN

Power Dissipation-Max :

1.5W Ta

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2016

Terminal Position :

Dual

Number of Elements :

1

Radiation Hardening :

No

Element Configuration :

Single

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Turn On Delay Time :

15 ns

Gate to Source Voltage (Vgs) :

20V

Rise Time :

15ns

Power Dissipation :

1.5W

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.0023A

Continuous Drain Current (ID) :

2.3A

Drain to Source Breakdown Voltage :

200V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

40 ns

FET Type :

N-Channel

Vgs (Max) :

±20V

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Fall Time (Typ) :

20 ns

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta