SI4413ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Rise Time :

18ns

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

REACH SVHC :

Unknown

Power Dissipation-Max :

1.5W Ta

Pin Count :

8

Published :

2012

Terminal Form :

Gull wing

Series :

TrenchFET®

JESD-609 Code :

e3

Terminal Position :

Dual

FET Type :

P-Channel

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Weight :

186.993455mg

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 5V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-15A

Drain-source On Resistance-Max :

0.0075Ohm

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Turn On Delay Time :

21 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 13A, 10V

Mount :

Surface Mount

Turn-Off Delay Time :

170 ns

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Threshold Voltage :

-1V

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

97 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V