SI4412ADY-T1-E3
- Mfr.Part #
- SI4412ADY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 5.8A 8SO
- Stock
- 18,846
- In Stock :
- 18,846
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Fall Time (Typ) :
- 6 ns
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- N-Channel
- Series :
- TrenchFET®
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Number of Terminations :
- 8
- Rise Time :
- 6ns
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 30A
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 24mOhm
- Power Dissipation :
- 1.3W
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Drain Current (ID) :
- 5.8A
- Power Dissipation-Max :
- 1.3W Ta
- Current - Continuous Drain (Id) @ 25°C :
- 5.8A Ta
- Pin Count :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 15 ns
- Drain to Source Breakdown Voltage :
- 30V
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Published :
- 2013
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 8A, 10V
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 26 ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- SI4412ADY-T1-E3

N-Channel Tape & Reel (TR) 24m Ω @ 8A, 10V ±20V 20nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4412ADY-T1-E3 Overview
This device's continuous drain current (ID) is 5.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 26 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 30A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI4412ADY-T1-E3 Features
a continuous drain current (ID) of 5.8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 30A.
SI4412ADY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4412ADY-T1-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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