SI4411DY-T1-GE3

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Mfr.Part #
SI4411DY-T1-GE3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 9A 8SO
Stock
32,643
In Stock :
32,643

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
9A Ta
Series :
TrenchFET®
Rds On (Max) @ Id, Vgs :
10mOhm @ 13A, 10V
FET Type :
P-Channel
Min Operating Temperature :
-55°C
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
9A
Published :
2009
Max Operating Temperature :
150°C
Drain to Source Breakdown Voltage :
30V
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Rise Time :
15ns
Rds On Max :
10 MΩ
Element Configuration :
Single
Turn On Delay Time :
18 ns
Fall Time (Typ) :
75 ns
Drain to Source Voltage (Vdss) :
30V
Drain to Source Resistance :
10MOhm
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3V @ 250µA
Turn-Off Delay Time :
140 ns
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 5V
Power Dissipation-Max :
1.5W Ta
Power Dissipation :
1.5W
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
RoHS Status :
ROHS3 Compliant
Datasheets
SI4411DY-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4411DY-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), SI4411DY-T1-GE3 pinout, SI4411DY-T1-GE3 datasheet PDF, SI4411DY-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4411DY-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4411DY-T1-GE3


P-Channel Tape & Reel (TR) 10mOhm @ 13A, 10V ±20V 65nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)

SI4411DY-T1-GE3 Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 140 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 10mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI4411DY-T1-GE3 Features


a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 140 ns
single MOSFETs transistor is 10mOhm
a 30V drain to source voltage (Vdss)


SI4411DY-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI4411DY-T1-GE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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