SI4411DY-T1-GE3
- Mfr.Part #
- SI4411DY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 9A 8SO
- Stock
- 32,643
- In Stock :
- 32,643
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Series :
- TrenchFET®
- Rds On (Max) @ Id, Vgs :
- 10mOhm @ 13A, 10V
- FET Type :
- P-Channel
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 9A
- Published :
- 2009
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 15ns
- Rds On Max :
- 10 MΩ
- Element Configuration :
- Single
- Turn On Delay Time :
- 18 ns
- Fall Time (Typ) :
- 75 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Drain to Source Resistance :
- 10MOhm
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- 8-SO
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Turn-Off Delay Time :
- 140 ns
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 5V
- Power Dissipation-Max :
- 1.5W Ta
- Power Dissipation :
- 1.5W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SI4411DY-T1-GE3

P-Channel Tape & Reel (TR) 10mOhm @ 13A, 10V ±20V 65nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
SI4411DY-T1-GE3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 140 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 10mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI4411DY-T1-GE3 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 140 ns
single MOSFETs transistor is 10mOhm
a 30V drain to source voltage (Vdss)
SI4411DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4411DY-T1-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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