SI4411DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

140 ns

Radiation Hardening :

No

Pin Count :

8

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Resistance :

10MOhm

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

P-Channel

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 13A, 10V

Number of Terminations :

8

Terminal Position :

Dual

Lead Free :

Lead Free

Fall Time (Typ) :

15 ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain Current-Max (Abs) (ID) :

9A

Number of Elements :

1

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 5V

Power Dissipation :

1.5W

JESD-609 Code :

e3

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

18 ns

Number of Pins :

8

Series :

TrenchFET®

Published :

2016

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

9A

Element Configuration :

Single