SI4410DY,518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e4

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Drain Current-Max (Abs) (ID) :

10A

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Pin Count :

8

Terminal Form :

Gull wing

HTS Code :

8541.29.00.75

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchMOS™

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 10A, 10V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Surface Mount :

yes

FET Type :

N-Channel

Terminal Finish :

NICKEL PALLADIUM GOLD

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

2.5W Ta

JEDEC-95 Code :

MS-012AA

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.0135Ohm

Transistor Application :

SWITCHING