SI4410BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Turn-Off Delay Time :

40 ns

Nominal Vgs :

1 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

Unknown

Pin Count :

8

Terminal Form :

Gull wing

Length :

5mm

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Contact Plating :

Tin

Transistor Element Material :

SILICON

Resistance :

13.5mOhm

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Number of Elements :

1

Series :

TrenchFET®

Rise Time :

10ns

Power Dissipation-Max :

1.4W Ta

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Weight :

186.993455mg

Mounting Type :

Surface Mount

Fall Time (Typ) :

10 ns

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Published :

2009

ECCN Code :

EAR99

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

10 ns

Number of Terminations :

8

Continuous Drain Current (ID) :

7.5A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 10A, 10V

Drain to Source Breakdown Voltage :

30V

Number of Channels :

1

Height :

1.5494mm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.4W

Width :

3.9878mm

FET Type :

N-Channel

Terminal Position :

Dual

Element Configuration :

Single