SI4409DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

PURE MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

332pF @ 50V

Radiation Hardening :

No

Mount :

Surface Mount

Continuous Drain Current (ID) :

900mA

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

ECCN Code :

EAR99

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

1.3A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

8

Series :

TrenchFET®

Fall Time (Typ) :

10 ns

Published :

2016

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.2W

Turn-Off Delay Time :

13 ns

Power Dissipation-Max :

2.2W Ta 4.6W Tc

Transistor Application :

SWITCHING

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Terminations :

8

Number of Elements :

1

Turn On Delay Time :

7 ns

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

150V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 500mA, 10V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Rise Time :

10ns

Terminal Form :

Gull wing