SI4409DY-T1-E3
- Mfr.Part #
- SI4409DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 1.3A 8SO
- Stock
- 10,265
- In Stock :
- 10,265
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- TrenchFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Power Dissipation-Max :
- 2.2W Ta 4.6W Tc
- Element Configuration :
- Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Turn On Delay Time :
- 7 ns
- Number of Terminations :
- 8
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 500mA, 10V
- Power Dissipation :
- 2.2W
- FET Type :
- P-Channel
- Resistance :
- 1.2Ohm
- Continuous Drain Current (ID) :
- 900mA
- Vgs (Max) :
- ±20V
- Published :
- 2013
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rise Time :
- 10ns
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A Tc
- Turn-Off Delay Time :
- 13 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 8
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 10 ns
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 150V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 332pF @ 50V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Datasheets
- SI4409DY-T1-E3

P-Channel Tape & Reel (TR) 1.2 Ω @ 500mA, 10V ±20V 332pF @ 50V 12nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4409DY-T1-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 332pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 900mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 13 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SI4409DY-T1-E3 Features
a continuous drain current (ID) of 900mA
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 13 ns
SI4409DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4409DY-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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