SI4226DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

8 ns

Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

7.5A

Drain-source On Resistance-Max :

0.0195ohm

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

25V

Width :

4mm

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

8A

Number of Pins :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

25V

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 7A, 4.5V

Rise Time :

10ns

Pbfree Code :

yes

Length :

5mm

Number of Channels :

2

Height :

1.55mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

14 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Published :

2009

Series :

TrenchFET®

Power - Max :

3.2W

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 15V

Mount :

Surface Mount

Weight :

186.993455mg

Element Configuration :

Dual

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

30 ns

Number of Terminations :

8

Base Part Number :

SI4226

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)