SI4196DY-T1-E3

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Mfr.Part #
SI4196DY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 20V 8A 8SO
Stock
26,826
In Stock :
26,826

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
20V
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 8V
Mount :
Surface Mount
Series :
TrenchFET®
RoHS Status :
ROHS3 Compliant
Rise Time :
13ns
Continuous Drain Current (ID) :
8A
Supplier Device Package :
8-SO
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±8V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150°C
Turn On Delay Time :
8 ns
Input Capacitance (Ciss) (Max) @ Vds :
830pF @ 10V
Fall Time (Typ) :
9 ns
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
8V
Power Dissipation-Max :
2W Ta 4.6W Tc
Turn-Off Delay Time :
33 ns
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Published :
2013
Min Operating Temperature :
-55°C
Input Capacitance :
830pF
Vgs(th) (Max) @ Id :
1V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Rds On Max :
27 mΩ
Radiation Hardening :
No
Rds On (Max) @ Id, Vgs :
27mOhm @ 8A, 4.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
SI4196DY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4196DY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SI4196DY-T1-E3 pinout, SI4196DY-T1-E3 datasheet PDF, SI4196DY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4196DY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4196DY-T1-E3


N-Channel Tape & Reel (TR) 27mOhm @ 8A, 4.5V ±8V 830pF @ 10V 22nC @ 8V 20V 8-SOIC (0.154, 3.90mm Width)

SI4196DY-T1-E3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 830pF @ 10V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).

SI4196DY-T1-E3 Features


a continuous drain current (ID) of 8A
the turn-off delay time is 33 ns
a 20V drain to source voltage (Vdss)


SI4196DY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4196DY-T1-E3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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