SI4100DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 50V

Weight :

186.993455mg

Length :

5mm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Fall Time (Typ) :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain-source On Resistance-Max :

0.063Ohm

Number of Terminations :

8

Factory Lead Time :

14 Weeks

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Width :

4mm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Elements :

1

Mounting Type :

Surface Mount

Number of Channels :

1

Drain to Source Voltage (Vdss) :

100V

Height :

1.55mm

JESD-609 Code :

e3

Continuous Drain Current (ID) :

4.4A

Number of Pins :

8

Contact Plating :

Tin

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta 6W Tc

Rds On (Max) @ Id, Vgs :

63m Ω @ 4.4A, 10V

Rise Time :

12ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Published :

2009

Turn-Off Delay Time :

15 ns

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Series :

TrenchFET®

Terminal Position :

Dual

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vgs (Max) :

±20V

Turn On Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

20A