SI4104DY-T1-E3
- Mfr.Part #
- SI4104DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.6A 8SO
- Stock
- 315
- In Stock :
- 315
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 446pF @ 50V
- Power Dissipation-Max :
- 2.5W Ta 5W Tc
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 8
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2.5W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Dual
- Turn On Delay Time :
- 9 ns
- Drain Current-Max (Abs) (ID) :
- 4.6A
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 4 mJ
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- TrenchFET®
- Fall Time (Typ) :
- 8 ns
- Continuous Drain Current (ID) :
- 3.2A
- Number of Pins :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Rise Time :
- 9ns
- Number of Terminations :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2016
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 10 ns
- Datasheets
- SI4104DY-T1-E3

N-Channel Tape & Reel (TR) 105m Ω @ 5A, 10V ±20V 446pF @ 50V 13nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)
SI4104DY-T1-E3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 446pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.2A.4.6A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 10 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
SI4104DY-T1-E3 Features
the avalanche energy rating (Eas) is 4 mJ
a continuous drain current (ID) of 3.2A
the turn-off delay time is 10 ns
a 100V drain to source voltage (Vdss)
SI4104DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4104DY-T1-E3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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