SI4102DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2016

Rise Time :

10ns

Max Operating Temperature :

150°C

Turn-Off Delay Time :

12 ns

Power Dissipation-Max :

2.4W Ta 4.8W Tc

FET Type :

N-Channel

Turn On Delay Time :

10 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

158mOhm @ 2.7A, 10V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Number of Elements :

1

Rds On Max :

158 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 50V

Element Configuration :

Single

Input Capacitance :

370pF

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Power Dissipation :

2.4W

Packaging :

Tape and Reel (TR)

Drain to Source Resistance :

158mOhm

Mounting Type :

Surface Mount

Radiation Hardening :

No

Supplier Device Package :

8-SO

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Continuous Drain Current (ID) :

2.7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)