SI4103DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

7.9mOhm @ 10A, 10V

Supplier Device Package :

8-SO

Series :

TrenchFET® Gen III

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta 5.2W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

14A Ta 16A Tc

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 15V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V