SI4190ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Contact Plating :

Tin

Transistor Element Material :

SILICON

Nominal Vgs :

1.5 V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

13A

Element Configuration :

Single

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Length :

5mm

Power Dissipation :

3W

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Weight :

506.605978mg

Power Dissipation-Max :

3W Ta 6W Tc

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

18.4A Tc

Turn-Off Delay Time :

34 ns

JESD-609 Code :

e3

Resistance :

8.8MOhm

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

100V

Published :

2013

Width :

4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.5V

Number of Elements :

1

Turn On Delay Time :

12 ns

REACH SVHC :

No SVHC

Series :

TrenchFET®

Terminal Form :

Gull wing

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1970pF @ 50V

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 15A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.75mm

Radiation Hardening :

No

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.8V @ 250μA