SI4186DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 15A, 10V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

29 ns

Terminal Form :

Gull wing

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0026Ohm

Drain Current-Max (Abs) (ID) :

25.3A

RoHS Status :

ROHS3 Compliant

Published :

2013

Continuous Drain Current (ID) :

35.8A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Number of Terminations :

8

Mount :

Surface Mount

Terminal Finish :

PURE MATTE TIN

Number of Channels :

1

ECCN Code :

EAR99

Radiation Hardening :

No

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

20V

Current - Continuous Drain (Id) @ 25°C :

35.8A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

40 ns

Mounting Type :

Surface Mount

Series :

TrenchFET®

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Weight :

540.001716mg

Number of Elements :

1

Power Dissipation :

3W

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

3630pF @ 10V

JESD-609 Code :

e3

Terminal Position :

Dual

Fall Time (Typ) :

13 ns

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Nominal Vgs :

2.4 V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

16ns

Power Dissipation-Max :

3W Ta 6W Tc