SI4168DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

JESD-609 Code :

e3

ECCN Code :

EAR99

Power Dissipation-Max :

2.5W Ta 5.7W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

30 ns

Fall Time (Typ) :

15 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Height :

1.5mm

Power Dissipation :

2.5W

Turn On Delay Time :

25 ns

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Weight :

186.993455mg

Mount :

Surface Mount

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

24A

Continuous Drain Current (ID) :

24mA

Radiation Hardening :

No

Transistor Element Material :

SILICON

Pin Count :

8

Width :

4mm

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Rise Time :

14ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0057Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 20A, 10V

Length :

5mm