SI4128DY-T1-E3
- Mfr.Part #
- SI4128DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10.9A 8SO
- Stock
- 88,104
- In Stock :
- 88,104
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 7.8A, 10V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.024Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 435pF @ 15V
- Transistor Application :
- SWITCHING
- Weight :
- 186.993455mg
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 10.9A
- Published :
- 2016
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- DS Breakdown Voltage-Min :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 10.9A Ta
- Height :
- 1.5mm
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2.4W Ta 5W Tc
- Turn-Off Delay Time :
- 15 ns
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Rise Time :
- 10ns
- Turn On Delay Time :
- 5 ns
- Fall Time (Typ) :
- 10 ns
- Factory Lead Time :
- 14 Weeks
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Series :
- TrenchFET®
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 8
- Terminal Form :
- Gull wing
- Length :
- 5mm
- Width :
- 4mm
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- SI4128DY-T1-E3

N-Channel Tape & Reel (TR) 24m Ω @ 7.8A, 10V ±20V 435pF @ 15V 12nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
SI4128DY-T1-E3 Overview
A device's maximum input capacitance is 435pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10.9A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI4128DY-T1-E3 Features
a continuous drain current (ID) of 10.9A
the turn-off delay time is 15 ns
a 30V drain to source voltage (Vdss)
SI4128DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4128DY-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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