SI4124DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Turn On Delay Time :

30 ns

Height :

1.55mm

Factory Lead Time :

14 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

20.5A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

11 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0075Ohm

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

3540pF @ 20V

Published :

2013

Continuous Drain Current (ID) :

13.6A

Drain to Source Voltage (Vdss) :

40V

Element Configuration :

Single

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Weight :

186.993455mg

Rise Time :

14ns

Length :

5mm

Drain Current-Max (Abs) (ID) :

20.5A

Width :

4mm

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 14A, 10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Series :

TrenchFET®

Number of Elements :

1

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

38 ns

Power Dissipation :

2.5W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 5.7W Tc

Number of Pins :

8

Number of Terminations :

8

JESD-609 Code :

e3

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

DS Breakdown Voltage-Min :

40V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30