SI4116DY-T1-E3
- Mfr.Part #
- SI4116DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 18A 8SO
- Stock
- 32,341
- In Stock :
- 32,341
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 5mm
- Pin Count :
- 8
- Factory Lead Time :
- 14 Weeks
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1925pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- Vgs (Max) :
- ±12V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 8.6m Ω @ 10A, 10V
- Published :
- 2016
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 25V
- Continuous Drain Current (ID) :
- 12.7A
- Power Dissipation :
- 2.5W
- Number of Terminations :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 2.5W Ta 5W Tc
- Transistor Application :
- SWITCHING
- Resistance :
- 8.6mOhm
- Weight :
- 186.993455mg
- Series :
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Rise Time :
- 11ns
- Turn On Delay Time :
- 13 ns
- Fall Time (Typ) :
- 15 ns
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 4mm
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 12V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- DS Breakdown Voltage-Min :
- 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height :
- 1.55mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 50 ns
- Datasheets
- SI4116DY-T1-E3

N-Channel Tape & Reel (TR) 8.6m Ω @ 10A, 10V ±12V 1925pF @ 15V 56nC @ 10V 25V 8-SOIC (0.154, 3.90mm Width)
SI4116DY-T1-E3 Overview
The maximum input capacitance of this device is 1925pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12.7A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 50 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (2.5V 10V), this device helps reduce its power consumption.
SI4116DY-T1-E3 Features
a continuous drain current (ID) of 12.7A
the turn-off delay time is 50 ns
a 25V drain to source voltage (Vdss)
SI4116DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4116DY-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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