SI4114DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rise Time :

13ns

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Resistance :

6mOhm

Fall Time (Typ) :

30 ns

Vgs (Max) :

±16V

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

REACH SVHC :

Unknown

Height :

1.5mm

Turn-Off Delay Time :

60 ns

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

20A Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Weight :

186.993455mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Element Configuration :

Single

Published :

2012

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Drain to Source Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

30 ns

Terminal Form :

Gull wing

Number of Terminations :

8

Power Dissipation-Max :

2.5W Ta 5.7W Tc

Radiation Hardening :

No

Length :

5mm

Width :

4mm

Lead Free :

Lead Free

Power Dissipation :

2.5W

Transistor Application :

SWITCHING

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 10V

Threshold Voltage :

2.1V

Continuous Drain Current (ID) :

20A

Mounting Type :

Surface Mount

Terminal Position :

Dual

Number of Channels :

1

Series :

TrenchFET®

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

16V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

6m Ω @ 10A, 10V