SI4114DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

6m Ω @ 10A, 10V

Vgs (Max) :

±16V

Series :

TrenchFET®

Width :

4mm

Turn On Delay Time :

30 ns

Element Configuration :

Single

Published :

2014

Continuous Drain Current (ID) :

15.2A

Fall Time (Typ) :

30 ns

Weight :

186.993455mg

Number of Terminations :

8

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta 5.7W Tc

Power Dissipation :

2.5W

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 10V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Height :

1.5mm

Length :

5mm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Turn-Off Delay Time :

60 ns

Pin Count :

8

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

13ns

Drain-source On Resistance-Max :

0.006Ohm

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

20A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

16V

Terminal Position :

Dual

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ