SI2399DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

-6A

Nominal Vgs :

-600 mV

Turn-Off Delay Time :

28 ns

Fall Time (Typ) :

9 ns

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

835pF @ 10V

Rise Time :

20ns

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

6A

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Published :

2016

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

2.5W

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Vgs (Max) :

±12V

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

14 Weeks

Turn On Delay Time :

22 ns

Drain to Source Breakdown Voltage :

-20V

Height :

1.12mm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Threshold Voltage :

-600mV

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Series :

TrenchFET®

Terminal Form :

Gull wing

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Tc

Rds On (Max) @ Id, Vgs :

34m Ω @ 5.1A, 10V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

6A Tc