SI2301CDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Turn-Off Delay Time :

30 ns

Drain to Source Voltage (Vdss) :

20V

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-1V

Power Dissipation :

1.6W

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

860mW Ta 1.6W Tc

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Element Configuration :

Single

Drain to Source Resistance :

90mOhm

Lead Free :

Lead Free

Supplier Device Package :

SOT-23-3 (TO-236)

Max Operating Temperature :

150°C

Factory Lead Time :

14 Weeks

Rise Time :

35ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance :

405pF

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

35 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

112mOhm @ 2.8A, 4.5V

Height :

1.12mm

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 10V

Series :

TrenchFET®

Turn On Delay Time :

11 ns

Continuous Drain Current (ID) :

-3.1A

Nominal Vgs :

-400 mV

Number of Pins :

3

Published :

2012

Resistance :

112MOhm

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Drain to Source Breakdown Voltage :

-20V

Weight :

1.437803g

Number of Channels :

1

Max Junction Temperature (Tj) :

150°C

Length :

3.04mm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Width :

1.4mm

Rds On Max :

112 mΩ