SI2301BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Length :

3.04mm

Turn-Off Delay Time :

30 ns

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Continuous Drain Current (ID) :

-2.2A

ECCN Code :

EAR99

Pbfree Code :

yes

Series :

TrenchFET®

Threshold Voltage :

-950mV

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Vgs(th) (Max) @ Id :

950mV @ 250μA

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.8A, 4.5V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

375pF @ 6V

Mounting Type :

Surface Mount

Resistance :

100MOhm

Number of Channels :

1

Terminal Position :

Dual

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

JESD-609 Code :

e3

Height :

1.12mm

Rise Time :

40ns

Fall Time (Typ) :

40 ns

Element Configuration :

Single

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

700mW

Published :

2003

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Nominal Vgs :

-950 mV

Packaging :

Tape and Reel (TR)

Width :

1.4mm

Power Dissipation-Max :

700mW Ta

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

20 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Junction Temperature (Tj) :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

REACH SVHC :

Unknown

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Weight :

1.437803g

Pin Count :

3

Radiation Hardening :

No

FET Type :

P-Channel