SI2300DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Element Configuration :

Single

REACH SVHC :

Unknown

Radiation Hardening :

No

ECCN Code :

EAR99

Pbfree Code :

yes

Turn-Off Delay Time :

15 ns

Power Dissipation-Max :

1.1W Ta 1.7W Tc

Threshold Voltage :

600mV

Number of Terminations :

3

Factory Lead Time :

14 Weeks

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

Power Dissipation :

1.1W

Resistance :

68mOhm

Lead Free :

Lead Free

Rise Time :

15ns

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Vgs (Max) :

±12V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

11 ns

FET Type :

N-Channel

Series :

TrenchFET®

Max Junction Temperature (Tj) :

150°C

Height :

1.12mm

Rds On (Max) @ Id, Vgs :

68m Ω @ 2.9A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Position :

Dual

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

1.437803g

JESD-609 Code :

e3

Number of Elements :

1

Gate to Source Voltage (Vgs) :

12V

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Continuous Drain Current (ID) :

3.1A

Turn On Delay Time :

5 ns

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)