SI2301CDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-20V

Lead Free :

Lead Free

Terminal Position :

Dual

Number of Elements :

1

Height :

1.12mm

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

112m Ω @ 2.8A, 4.5V

Element Configuration :

Single

Continuous Drain Current (ID) :

-2.3A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Channels :

1

Pin Count :

3

Turn On Delay Time :

11 ns

Power Dissipation-Max :

860mW Ta 1.6W Tc

ECCN Code :

EAR99

Vgs (Max) :

±8V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 10V

Terminal Finish :

Matte Tin (Sn)

Weight :

1.437803g

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Threshold Voltage :

-1V

Rise Time :

35ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

860mW

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

FET Type :

P-Channel

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Number of Pins :

3

Factory Lead Time :

14 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Width :

1.4mm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

35 ns

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Length :

3.04mm

Turn-Off Delay Time :

30 ns

Published :

2016