SI2393DS-T1-GE3

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Mfr.Part #
SI2393DS-T1-GE3
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 30V 6.1A/7.5A SOT23
Stock
14,990
In Stock :
14,990

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
+16V, -20V
Factory Lead Time :
14 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
FET Type :
P-Channel
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
SOT-23-3 (TO-236)
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
25.2nC @ 10V
Drain to Source Voltage (Vdss) :
30V
Series :
TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs :
22.7mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
980pF @ 15V
Power Dissipation-Max :
1.3W Ta 2.5W Tc
Package / Case :
TO-236-3, SC-59, SOT-23-3
Current - Continuous Drain (Id) @ 25°C :
6.1A Ta 7.5A Tc
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Datasheets
SI2393DS-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI2393DS-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, SI2393DS-T1-GE3 pinout, SI2393DS-T1-GE3 datasheet PDF, SI2393DS-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI2393DS-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI2393DS-T1-GE3


P-Channel Tape & Reel (TR) 22.7mOhm @ 5A, 10V +16V, -20V 980pF @ 15V 25.2nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

SI2393DS-T1-GE3 Description


SI2393DS-T1-GE3 is a P-channel Power MOSFET from the manufacturer of Vishay Siliconix with the Drain to Source Voltage (Vdss) of 30V. The operating temperature of SI2393DS-T1-GE3 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Tc. The Input Capacitance (Ciss) (Max) @ Vds of SI2393DS-T1-GE3 is 980pF @ 15V and its Gate Charge (Qg) (Max) @ Vgs is 25.2nC @ 10V.



SI2393DS-T1-GE3 Features


TrenchFET® Gen IV p-channel power MOSFET

100 % Rg and UIS tested

Material categorization



SI2393DS-T1-GE3 Applications


Load switch

Circuit protection

Motor drive control


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