SI2377EDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Number of Elements :

1

Weight :

1.437803g

Radiation Hardening :

No

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

8V

Threshold Voltage :

-400mV

Rds On (Max) @ Id, Vgs :

61m Ω @ 3.2A, 4.5V

Contact Plating :

Tin

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Published :

2010

Nominal Vgs :

-400 mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Continuous Drain Current (ID) :

-4.4A

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Power Dissipation :

1.25W

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-20V

Terminal Position :

Dual

Number of Pins :

3

FET Type :

P-Channel

Resistance :

61mOhm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 8V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

1V @ 250μA

Lead Free :

Lead Free

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.25W Ta 1.8W Tc

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

20V