SI2374DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

22ns

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

3

Mount :

Surface Mount

Threshold Voltage :

1V

Vgs (Max) :

±8V

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Height :

1.12mm

Factory Lead Time :

14 Weeks

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

5.9A

Fall Time (Typ) :

9 ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta 5.9A Tc

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

960mW Ta 1.7W Tc

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10 ns

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Series :

TrenchFET®

Number of Channels :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Lead Free :

Lead Free

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

735pF @ 10V

Turn-Off Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

30m Ω @ 4A, 4.5V

Peak Reflow Temperature (Cel) :

260

Published :

2017

Power Dissipation :

960mW

Continuous Drain Current (ID) :

4.5A

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel