SI2371EDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Terminations :

3

Power Dissipation :

1.7W

Radiation Hardening :

No

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

52 ns

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Number of Pins :

3

Number of Channels :

1

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

-30V

Mount :

Surface Mount

Height :

1.12mm

Number of Elements :

1

Fall Time (Typ) :

62 ns

ECCN Code :

EAR99

FET Type :

P-Channel

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

-600mV

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

150°C

Rise Time :

65ns

Power Dissipation-Max :

1W Ta 1.7W Tc

Vgs (Max) :

±12V

Resistance :

45mOhm

Lead Free :

Lead Free

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.7A, 10V

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Turn On Delay Time :

7 ns

Continuous Drain Current (ID) :

-4.8A

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V