SI2369DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Power Dissipation :

1.25W

Turn-Off Delay Time :

38 ns

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1295pF @ 15V

Terminal Position :

Dual

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain-source On Resistance-Max :

0.029Ohm

Radiation Hardening :

No

JESD-609 Code :

e3

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

1.25W Ta 2.5W Tc

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-5.4A

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Height :

1.12mm

Turn On Delay Time :

13 ns

Drain to Source Breakdown Voltage :

-30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

7.6A

Max Junction Temperature (Tj) :

150°C

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Number of Terminations :

3

FET Type :

P-Channel

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

-1.2V

Vgs (Max) :

±20V