SI2369BDS-T1-GE3

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Mfr.Part #
SI2369BDS-T1-GE3
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 30V 5.6A/7.5A SOT23
Stock
31,177
In Stock :
31,177

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Factory Lead Time :
14 Weeks
FET Type :
P-Channel
Rds On (Max) @ Id, Vgs :
27mOhm @ 5A, 10V
Series :
TrenchFET® Gen IV
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
+16V, -20V
Gate Charge (Qg) (Max) @ Vgs :
19.5nC @ 10V
Supplier Device Package :
SOT-23-3 (TO-236)
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
5.6A Ta 7.5A Tc
Drain to Source Voltage (Vdss) :
30V
Power Dissipation-Max :
1.3W Ta 2.5W Tc
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
745pF @ 15V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
SI2369BDS-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI2369BDS-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, SI2369BDS-T1-GE3 pinout, SI2369BDS-T1-GE3 datasheet PDF, SI2369BDS-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI2369BDS-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI2369BDS-T1-GE3


P-Channel Tape & Reel (TR) 27mOhm @ 5A, 10V +16V, -20V 745pF @ 15V 19.5nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

SI2369BDS-T1-GE3 Description


MOSFET (P-Channel, 30 V, D-S)



SI2369BDS-T1-GE3 Features


  • Gen IV p-channel power MOSFET TrenchFET®

  • Complete Rg and UIS testing



SI2369BDS-T1-GE3 Applications


• loading switch


• Circuit defense


• Control for motor drive


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