SI2367DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 8V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Series :

TrenchFET®

Threshold Voltage :

-400mV

Power Dissipation :

960mW

Vgs (Max) :

±8V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

8V

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

Unknown

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Terminations :

3

Power Dissipation-Max :

960mW Ta 1.7W Tc

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Turn On Delay Time :

8 ns

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

Weight :

1.437803g

Fall Time (Typ) :

9 ns

Continuous Drain Current (ID) :

-3.8A

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

561pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

20V

Element Configuration :

Single

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

66m Ω @ 2.5A, 4.5V

Mount :

Surface Mount

Published :

2017

Pin Count :

3

Number of Elements :

1

Turn-Off Delay Time :

35 ns

Rise Time :

9ns

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1V @ 250μA

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Resistance :

66mOhm