SI2356DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

51m Ω @ 3.2A, 10V

Turn On Delay Time :

6 ns

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Series :

TrenchFET®

Power Dissipation-Max :

960mW Ta 1.7W Tc

Drain to Source Breakdown Voltage :

40V

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

53 ns

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

N-Channel

Vgs (Max) :

±12V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

REACH SVHC :

No SVHC

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 20V

Terminal Form :

Gull wing

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2015

Lead Free :

Lead Free

Number of Channels :

1

Number of Elements :

1

Threshold Voltage :

1.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Power Dissipation :

960mW

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

12V

Rise Time :

52ns

Height :

1.12mm

Turn-Off Delay Time :

13 ns

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

3.2A

Transistor Application :

SWITCHING

Element Configuration :

Single

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Weight :

1.437803g