SI2343DS-T1
- Mfr.Part #
- SI2343DS-T1
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 3.1A SOT23-3
- Stock
- 23,857
- In Stock :
- 23,857
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 30V
- Drain to Source Resistance :
- 53mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Ta
- Series :
- TrenchFET®
- Width :
- 1.4mm
- Continuous Drain Current (ID) :
- 3.1A
- Weight :
- 1.437803g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 10 ns
- Turn-Off Delay Time :
- 31 ns
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 540pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Rise Time :
- 15ns
- FET Type :
- P-Channel
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2013
- Rds On Max :
- 53 mΩ
- Height :
- 1.02mm
- Max Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 750mW Ta
- Packaging :
- Tape and Reel (TR)
- Input Capacitance :
- 540pF
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Rds On (Max) @ Id, Vgs :
- 53mOhm @ 4A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 15 ns
- Length :
- 3.04mm
- Datasheets
- SI2343DS-T1

P-Channel Tape & Reel (TR) 53mOhm @ 4A, 10V ±20V 540pF @ 15V 21nC @ 10V 30V TO-236-3, SC-59, SOT-23-3
SI2343DS-T1 Overview
A device's maximal input capacitance is 540pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.1A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 31 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 53mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI2343DS-T1 Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 31 ns
single MOSFETs transistor is 53mOhm
a 30V drain to source voltage (Vdss)
SI2343DS-T1 Applications
There are a lot of Vishay Siliconix
SI2343DS-T1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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