SI2341DS-T1-E3

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Mfr.Part #
SI2341DS-T1-E3
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 30V 2.5A SOT23-3
Stock
7,158
In Stock :
7,158

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2013
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain to Source Resistance :
72mOhm
Length :
3.04mm
Power Dissipation-Max :
710mW Ta
Lead Free :
Lead Free
Continuous Drain Current (ID) :
2.5A
Drain to Source Voltage (Vdss) :
30V
Mounting Type :
Surface Mount
Max Operating Temperature :
150°C
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
20 ns
RoHS Status :
ROHS3 Compliant
Min Operating Temperature :
-55°C
Number of Channels :
1
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 15V
Input Capacitance :
400pF
Height :
1.02mm
Rds On Max :
72 mΩ
Gate to Source Voltage (Vgs) :
20V
Series :
TrenchFET®
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
72mOhm @ 2.8A, 10V
Mount :
Surface Mount
Vgs (Max) :
±20V
Width :
1.4mm
Package / Case :
TO-236-3, SC-59, SOT-23-3
Weight :
1.437803g
Rise Time :
15ns
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Turn On Delay Time :
7 ns
Fall Time (Typ) :
15 ns
Supplier Device Package :
SOT-23-3 (TO-236)
FET Type :
P-Channel
Current - Continuous Drain (Id) @ 25°C :
2.5A Ta
Datasheets
SI2341DS-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI2341DS-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, SI2341DS-T1-E3 pinout, SI2341DS-T1-E3 datasheet PDF, SI2341DS-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI2341DS-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI2341DS-T1-E3


P-Channel Tape & Reel (TR) 72mOhm @ 2.8A, 10V ±20V 400pF @ 15V 15nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

SI2341DS-T1-E3 Overview


The maximum input capacitance of this device is 400pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 72mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI2341DS-T1-E3 Features


a continuous drain current (ID) of 2.5A
the turn-off delay time is 20 ns
single MOSFETs transistor is 72mOhm
a 30V drain to source voltage (Vdss)


SI2341DS-T1-E3 Applications


There are a lot of Vishay Siliconix
SI2341DS-T1-E3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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