SI2338DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.028Ohm

Power Dissipation-Max :

1.3W Ta 2.5W Tc

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

6A

REACH SVHC :

No SVHC

Turn-Off Delay Time :

20 ns

Published :

2012

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

6A

Number of Channels :

1

Mounting Type :

Surface Mount

Rise Time :

11ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Drain to Source Breakdown Voltage :

30V

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

424pF @ 15V

Number of Terminations :

3

Transistor Application :

SWITCHING

Power Dissipation :

1.3W

Terminal Form :

Gull wing

Series :

TrenchFET®

Reach Compliance Code :

Unknown

Weight :

1.437803g

Rds On (Max) @ Id, Vgs :

28m Ω @ 5.5A, 10V

Fall Time (Typ) :

7 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

ECCN Code :

EAR99

Terminal Position :

Dual

Transistor Element Material :

SILICON

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

25A

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2.5V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

3 ns

Lead Free :

Lead Free

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V