SI2335DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation :

750mW

Resistance :

51mOhm

REACH SVHC :

Unknown

Vgs (Max) :

±8V

Rise Time :

15ns

Published :

2015

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

-450 mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

-4A

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

51m Ω @ 4A, 4.5V

Series :

TrenchFET®

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Mount :

Surface Mount

Turn On Delay Time :

13 ns

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Terminal Position :

Dual

Turn-Off Delay Time :

50 ns

Number of Terminations :

3

Drain to Source Breakdown Voltage :

-12V

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Fall Time (Typ) :

15 ns

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

12V

Gate to Source Voltage (Vgs) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

1225pF @ 6V

Lead Free :

Lead Free

Power Dissipation-Max :

750mW Ta

Number of Pins :

3

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount