SI2333DS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Weight :

1.437803g

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation-Max :

750mW Ta

Turn On Delay Time :

25 ns

Mounting Type :

Surface Mount

Pin Count :

3

Element Configuration :

Single

Number of Elements :

1

Pbfree Code :

yes

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 6V

Fall Time (Typ) :

60 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Nominal Vgs :

-1 V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Series :

TrenchFET®

Threshold Voltage :

-1V

Published :

2013

Terminal Form :

Gull wing

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

-4.1A

Gate to Source Voltage (Vgs) :

8V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

32m Ω @ 5.3A, 4.5V

Turn-Off Delay Time :

72 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

12V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Number of Channels :

1

Vgs (Max) :

±8V

Radiation Hardening :

No