SI2333DS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Continuous Drain Current (ID) :

-4.1A

Element Configuration :

Single

Fall Time (Typ) :

45 ns

Turn-Off Delay Time :

72 ns

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Transistor Application :

SWITCHING

Rise Time :

45ns

Turn On Delay Time :

25 ns

Width :

1.4mm

Max Junction Temperature (Tj) :

150°C

Resistance :

32mOhm

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Vgs(th) (Max) @ Id :

1V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

32m Ω @ 5.3A, 4.5V

Weight :

1.437803g

Power Dissipation-Max :

750mW Ta

Number of Channels :

1

Threshold Voltage :

-1V

Factory Lead Time :

14 Weeks

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 6V

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

P-Channel

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

750mW

Drain to Source Voltage (Vdss) :

12V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

ECCN Code :

EAR99

Nominal Vgs :

-1 V

Pbfree Code :

yes

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Length :

3.04mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Terminal Form :

Gull wing

Published :

2008

Pin Count :

3

Height :

1.12mm

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-12V