SI2333DDS-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

3.04mm

Weight :

1.437803g

Rise Time :

24ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 8V

Series :

TrenchFET®

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

6A

Gate to Source Voltage (Vgs) :

8V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Height :

1.12mm

Width :

1.4mm

Power Dissipation-Max :

1.2W Ta 1.7W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2013

Turn On Delay Time :

26 ns

Rds On (Max) @ Id, Vgs :

28m Ω @ 5A, 4.5V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1275pF @ 6V

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.028Ohm

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-12V

Turn-Off Delay Time :

45 ns

Element Configuration :

Single

Fall Time (Typ) :

20 ns

Number of Elements :

1

Packaging :

Digi-Reel®

Lead Free :

Lead Free

Terminal Position :

Dual

Threshold Voltage :

-1V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

12V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1.2W

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Vgs (Max) :

±8V

Continuous Drain Current (ID) :

-5A

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Radiation Hardening :

No

Number of Pins :

3

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

FET Type :

P-Channel

Transistor Element Material :

SILICON